RBV2510_05 データシートの表示（PDF） - Electronics Industry

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RBV2510_05

SILICON BRIDGE RECTIFIERS

Electronics Industry 

RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 )

FIG.1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

30

25

20

15

10

HEAT-SINK MOUNTING, Tc

5" x 6" x 4.9" THK.

5 (12.8cm x 15.2cm x 12.4cm)

Al.-Finned plate

0

0

25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

PER DIODE

100

10

Pulse Width = 300 µs

1 % Duty Cycle

1.0

TJ = 25 °C

0.1

0.01

0.4

0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE, VOLTS

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

300

250

200

TJ = 50 °C

150

100

50

8.3 ms SINGLE HALF SINE WAVE

JEDEC METHOD

0

1

2

4 6 10 20 40 60 10

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE

10

TJ = 100 °C

1.0

0.1

TJ = 25 °C

0.0

0 20 40

60 80 100 12 140

PERCENT OF RATED

REVERSE VOLTAGE, (%)

Page 2 of 2

Rev. 03 : September 9, 2005

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