BT169B(2014) データシートの表示（PDF） - NXP Semiconductors.

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BT169B
(Rev.:2014)

SCR

NXP Semiconductors. 

BT169B

SCR

19 March 2014

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92)

plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic

ICs and other low power gate trigger circuits.

2. Features and benefits

• Planar passivated for voltage ruggedness and reliability

• Sensitive gate

• Direct triggering from low power gate circuits and logic ICs

3. Applications

• Ignition circuits

• Lighting ballasts

• Protection circuits

• Switched Mode Power Supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

VRRM

repetitive peak reverse

voltage

ITSM

non-repetitive peak on- half sine wave; Tj(init) = 25 °C;

state current

tp = 10 ms; Fig. 4; Fig. 5

IT(AV)

average on-state

current

half sine wave; Tlead ≤ 83 °C; Fig. 1

IT(RMS)

RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;

Fig. 3

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 10 mA; Tj = 25 °C;

Fig. 7

Min Typ Max Unit

-

-

200 V

-

-

200 V

-

-

8

A

-

-

0.5 A

-

-

0.8 A

-

50

200 µA

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