BT169B(2014) データシートの表示（PDF） - NXP Semiconductors.
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BT169B Datasheet PDF : 14 Pages
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NXP Semiconductors
BT169B
SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 1
IT(RMS)
RMS on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on-state half sine wave; Tj(init) = 25 °C;
current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/
µs
IGM
peak gate current
VRGM
peak reverse gate voltage
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
200 V
-
200 V
-
0.5 A
-
0.8 A
-
8
A
-
9
A
-
0.32 A2s
-
50
A/µs
-
1
A
-
5
V
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
0.8
Ptot
(W)
0.6
1.9
2.2
001aab446 77
a = 1.57
Tlead(max)
(°C)
89
2.8
0.4
4
0.2
conduction form
angle factor
(degrees) a
30
4
60
2.8
90
2.2
α
120
1.9
180
1.57
0
0
0.1
0.2
0.3
0.4
0.5
IT(AV) (A)
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
101
113
125
0.6
BT169B
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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