6B595
8-BIT SERIAL-INPUT,
DMOS POWER DRIVER
ELECTRICAL CHARACTERISTICS at TA = +25°C, VDD = 5 V, tir = tif ≤ 10 ns (unless otherwise
specified).
Characteristic
Output Breakdown
Voltage
Symbol
V(BR)DSX
Test Conditions
IO = 1 mA
Min.
50
Limits
Typ.
Max.
—
—
Units
V
Off-State Output
Current
IDSX
VO = 40 V, VDD = 5.5 V
VO = 40 V, VDD = 5.5 V, TA = 125°C
—
0.1
5.0
µA
—
0.15
8.0
µA
Static Drain-Source
rDS(on) IO = 100 mA, VDD = 4.5 V
—
4.2
5.7
Ω
On-State Resistance
IO = 100 mA, VDD = 4.5 V, TA = 125°C
—
6.8
9.5
Ω
IO = 350 mA, VDD = 4.5 V (see note)
—
5.5
8.0
Ω
Nominal Output
Current
ION
VDS(on) = 0.5 V, TA = 85°C
—
90
—
mA
Logic Input Current
SERIAL-DATA
Output Voltage
IIH
VI = VDD = 5.5 V
IIL
VI = 0, VDD = 5.5 V
VOH
IOH = -20 µA, VDD = 4.5 V
IOH = -4 mA, VDD = 4.5 V
VOL
IOL = 20 µA, VDD = 4.5 V
—
—
1.0
µA
—
—
-1.0
µA
4.4
4.49
—
V
4.0
4.2
—
V
—
0.005
0.1
V
Prop. Delay Time
Output Rise Time
Output Fall Time
Supply Current
tPLH
tPHL
tr
tf
IDD(OFF)
IDD(ON)
IOL = 4 mA, VDD = 4.5 V
IO = 100 mA, CL = 30 pF
IO = 100 mA, CL = 30 pF
IO = 100 mA, CL = 30 pF
IO = 100 mA, CL = 30 pF
VDD = 5.5 V, Outputs OFF
VDD = 5.5 V, Outputs ON
—
0.3
0.5
V
—
150
—
ns
—
90
—
ns
—
200
—
ns
—
200
—
ns
—
20
100
µA
—
150
300
µA
IDD(fclk) fclk = 5 MHz, CL = 30 pF, Outputs OFF
—
0.4
5.0
mA
Typical Data is at VDD = 5 V and is for design information only.
NOTE — Pulse test, duration ≤100 µs, duty cycle ≤2%.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000