6MBI10S-120 データシートの表示（PDF） - Fuji Electric
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6MBI10S-120 Datasheet PDF : 4 Pages
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6MBI10S-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
25
VGE= 20V 15V 12V
20
15
10V
10
5
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
25
Tj= 25 oC
Tj= 125 oC
20
15
10
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
5000
1000
Cies
500
100
50
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
30
35
IGBT Modules
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
25
VGE= 20V 15V 12V
20
15
10V
10
5
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 20A
Ic= 10A
Ic= 5A
10
15
20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=10A, Tj= 25 oC
25
25
800
20
600
15
400
10
200
5
0
0
0
20
40
60
80
100
Gate charge : Qg [ nC ]
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