6MBI10S-120 データシートの表示（PDF） - Fuji Electric
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6MBI10S-120 Datasheet PDF : 4 Pages
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6MBI10S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=120Ω,Tj=25oC
1000
500
toff
ton
tr
100
tf
50
0
5
10
15
20
Collector current : Ic [ A ]
5000
1000
500
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj= 25°C
ton
toff
tr
100
50
50
tf
100
500
1000
Gate resistance : Rg [ Ω ]
2000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj= 125°C
8
Eon
6
4
2
Eoff
0
50
100
Err
500
1000
2000
Gate resistance : Rg [ Ω ]
1000
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=120Ω,Tj=125oC
toff
500
ton
tr
tf
100
50
0
5
10
15
20
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=120Ω,Tj=25oC
3
Eon(125 oC)
2
Eon(25 oC)
Eoff(125 oC)
1
Eoff(25 oC)
Err(125 oC)
Err(25 oC)
0
0
5
10
15
20
Collector current : Ic [ A ]
Reverse bias safe operating area
25
+VGE=15V, -VGE<=15V, Rg>=120Ω,Tj=<125oC
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
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