TC2320TG データシートの表示（PDF） - Supertex Inc

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TC2320TG

N- and P- Channel Enhancement-Mode Dual MOSFET

Supertex Inc 

P-Channel Electrical Characteristics (@ 25°C unless otherwise specified)

TC2320

Symbol

BVDSS

VGS(th)

∆VGS(th)

IGSS

IDSS

Parameter

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Change in VGS(th) with Temperature

Gate Body Leakage

Zero Gate Voltage Drain Current

Min Typ Max Unit

-200

V

-1.0

-2.4

V

4.5 mV/°C

-100

nA

-10

µA

-1.0 mA

ID(ON)

ON-State Drain Current

-0.25 -0.7

A

-0.75 -2.1

RDS(ON)

Static Drain-to-Source

ON-State Resistance

10

15

Ω

8.0

12

∆RDS(ON) Change in RDS(ON) with Temperature

1.7

GFS

Forward Transconductance

100 250

CISS

Input Capacitance

75 125

COSS

Common Source Output Capacitance

20

85

CRSS

Reverse Transfer Capacitance

10

35

td(ON)

Turn-ON Delay Time

10

tr

Rise Time

15

td(OFF)

Turn-OFF Delay Time

20

tf

Fall Time

15

VSD

Diode Forward Voltage Drop

-1.8

trr

Reverse Recovery Time

300

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

%/°C

m

pF

ns

V

ns

Conditions

VGS = 0V, ID = -2mA

VGS = VDS, ID= -1mA

VGS = VDS, ID= -1mA

VGS = ± 20V, VDS = 0V

VGS = 0V, VDS = Max Rating

VGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

VGS = -4.5V, VDS = -25V

VGS = -10V, VDS = -25V

VGS = -4.5V, ID = -100mA

VGS = -10V, ID = -200mA

VGS = -10V, ID = -200mA

VDS = -25V, ID = -200mA

VGS = 0V, VDS = -25V

f = 1 MHz

VGS = 0V, ISD = -0.5A

VGS = 0V, ISD = -0.5A

Switching Waveforms and Test Circuit

0V

INPUT

-10V

0V

OUTPUT

VDD

10%

t(ON)

td(ON)

tr

90%

t(OFF)

td(OFF)

tF

90%

90%

10%

10%

PULSE

GENERATOR

Rgen

INPUT

D.U.T.

OUTPUT

RL

VDD

©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

3

03/23/02

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

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