74AHC1G07GW データシートの表示（PDF） - NXP Semiconductors.
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74AHC1G07GW Datasheet PDF : 11 Pages
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NXP Semiconductors
74AHC1G07; 74AHCT1G07
Buffer with open-drain output
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G07
tPZL
OFF-state A to Y; see Figure 5
to LOW
propagation
VCC = 3.0 V to 3.6 V [1]
delay
CL = 15 pF
- 3.5 5.6 1.0
6.3
1.0
7.0 ns
CL = 50 pF
- 5.0 8.0 1.0
9.0
1.0
10.0 ns
VCC = 4.5 V to 5.5 V [2]
CL = 15 pF
- 2.5 3.9 1.0
4.6
1.0
4.9 ns
CL = 50 pF
- 3.6 5.5 1.0
6.5
1.0
7.0 ns
tPLZ
LOW to
A to Y; see Figure 5
OFF-state
propagation
VCC = 3.0 V to 3.6 V [1]
delay
CL = 15 pF
- 5.8 7.9 1.0
8.4
1.0
8.9 ns
CL = 50 pF
- 8.3 11.5 1.0
12.0
1.0
12.5 ns
VCC = 4.5 V to 5.5 V [2]
CL = 15 pF
- 4.2 5.1 1.0
5.6
1.0
6.1 ns
CL = 50 pF
- 6.0 7.5 1.0
8.0
1.0
8.5 ns
CPD
power
per buffer;
[3] -
5
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
For type 74AHCT1G07
tPZL
OFF-state A to Y; see Figure 5
to LOW
propagation
VCC = 4.5 V to 5.5 V [2]
delay
CL = 15 pF
- 2.8 4.6 1.0
5.3
1.0
5.6 ns
CL = 50 pF
- 4.0 6.5 1.0
7.5
1.0
8.0 ns
tPLZ
LOW to
A to Y; see Figure 5
OFF-state
propagation
VCC = 4.5 V to 5.5 V [2]
delay
CL = 15 pF
- 3.9 5.6 1.0
6.1
1.0
6.6 ns
CL = 50 pF
- 5.5 8.0 1.0
8.5
1.0
9.0 ns
CPD
power
per buffer;
[3] -
6.5
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] Typical values are measured at VCC = 3.3 V.
[2] Typical values are measured at VCC = 5.0 V.
[3] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
74AHC_AHCT1G07_6
Product data sheet
Rev. 06 — 7 June 2007
© NXP B.V. 2007. All rights reserved.
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