74AHC595D データシートの表示（PDF） - NXP Semiconductors.
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74AHC595D
NXP Semiconductors.
74AHC595D Datasheet PDF : 21 Pages
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NXP Semiconductors
74AHC595; 74AHCT595
8-bit serial-in/serial-out or parallel-out shift register with output latches
Table 7. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ[1] Max Min Max
Min
Max
ten
enable time OE to Qn; see Figure 12
CL = 15 pF
CL = 50 pF
tdis
disable time OE to Qn; see Figure 12
CL = 15 pF
CL = 50 pF
fmax
maximum SHCP and STCP;
frequency see Figure 8 and 9
[4]
- 4.8 9.0 1.0 11.0
1.0
12.0 ns
- 6.2 11.6 1.0 13.0
1.0
14.5 ns
[5]
- 3.6 6.9 1.0
8.0
1.0
9.0 ns
- 5.8 10.3 1.0 11.0
1.0
12.0 ns
130 170 - 110
-
90
-
MHz
tW
pulse width SHCP HIGH or LOW;
see Figure 8
5.0 -
- 5.0
-
5.0
-
ns
STCP HIGH or LOW;
see Figure 9
5.0 -
- 5.0
-
5.0
-
ns
MR LOW; see Figure 11
5.0 -
- 5.0
-
5.0
-
ns
tsu
set-up time DS to SHCP; see Figure 9
SHCP to STCP;
see Figure 10
3.0 -
- 3.0
-
3.0
-
ns
5.0 -
- 5.0
-
5.0
-
ns
th
hold time DS to SHCP; see Figure 10
2.0 -
- 2.0
-
2.0
-
ns
trec
recovery MR to SHCP; see Figure 11
3.0 -
- 3.0
-
3.0
-
ns
time
CPD
power
fi = 1 MHz; VI = GND to VCC [6] - 190 -
-
-
-
-
pF
dissipation
[7]
capacitance
[1] Typical values are measured at nominal supply voltage.
[2] tpd is the same as tPHL and tPLH.
[3] tpd is the same as tPHL only.
[4] ten is the same as tPZL and tPZH.
[5] tdis is the same as tPLZ and tPHZ.
[6] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
Σ(CL × VCC2 × fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in V.
[7] All 9 outputs switching.
74AHC_AHCT595_4
Product data sheet
Rev. 04 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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