COM350A データシートの表示（PDF） - Omnirel Corp => IRF

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COM350A

(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PACKAGE

Omnirel Corp => IRF 

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM150A

Parameter

Min. Typ. Max. Units Test Conditions

B VDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IG S S R

ID S S

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

VG S = 0,

100

V

ID = 250 mA

2.0

4.0 V VD S = VG S,ID = 250 mA

100 nA VG S = +20 V

- 100 nA VG S = -20 V

0.1 0.25 m A VDS = Max. Rat., VG S = 0

VD S = 0.8 Max. Rat., VG S = 0,

0.2 1.0 m A

TC = 125° C

35

A VD S 2 VDS(on),VG S = 10 V

1.1 1.3 V VG S = 10 V, ID = 20 A

R DS(on) Static Drain-Source On-State

Resistance1

0.55 0.07

VG S = 10 V, ID = 20 A

R DS(on) Static Drain-Source On-State

Resistance1

1.0 0.12

VG S = 10 V, ID = 20 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

C iss Input Capacitance

C oss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

9.0

2700

1300

470

28

45

100

50

S(W ) VD S 2 VDS(on),ID = 20 A

pF VG S = 0

pF VD S = 25 V

pF f = 1 MHz

ns VD D = 30 V, ID @ 20 A

ns Rg = 5.0 W ,VG = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

IS M Source Current1

(Body Diode)

Modified MOSPOWER D

- 40 A

symbol showing

G

the integral P-N

- 160 A

Junction rectifier.

S

VSD Diode Forward Voltage1

tr

Reverse Recovery Time

-2.5 V TC = 25 C,IS = -40 A, VG S = 0

TJ = 150 C,IF =IS,

400

ns

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM250A

Parameter

Min. Typ. Max. Units Test Conditions

B VDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IG S S R

ID S S

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

VG S = 0,

200

V

ID = 250 mA

2.0

4.0 V VD S = VG S,ID = 250 mA

100 nA VG S = + 20 V

-100 nA VG S = - 20 V

0.1 0.25 m A VDS = Max. Rat., VG S = 0

VD S = 0.8 Max. Rat., VG S = 0,

0.2 1.0 m A

TC = 125° C

30

A VD S 2 VDS(on),VG S = 10 V

1.36 1.60 V VG S = 10 V, ID = 16 A

R DS(on) Static Drain-Source On-State

Resistance1

.085 .100

VG S = 10 V, ID = 16 A

R DS(on) Static Drain-Source On-State

Resistance1

0.15 0.18

VG S = 10 V, ID = 16 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

C iss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

10.0

2400

600

250

25

60

85

38

S(W ) VD S 2 VDS(on),ID = 16 A

pF VG S = 0

pF VD S = 25 V

pF f = 1 MHz

ns VD D = 75 V, ID @ 16 A

ns Rg = 5.0 W ,VG S = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

IS M Source Current1

(Body Diode)

Modified MOSPOWER D

- 30 A

symbol showing

G

the integral P-N

- 120 A

Junction rectifier.

S

VSD Diode Forward Voltage1

tr

Reverse Recovery Time

-2

350

V TC = 25 C,IS = -30 A, VG S = 0

TJ = 150 C,IF =IS,

ns

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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