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KBPC3510G/W データシートの表示(PDF) - LiteOn Technology

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KBPC3510G/W
LiteOn
LiteOn Technology LiteOn
KBPC3510G/W Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
KBPC35005G(W) thru 3510G(W)
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 35 Amperes
FEATURES
Rating to 1000V PRV
High efficiency
Glass passivated chip junction
Electrically isolated metal case for maximum heat
dissipation
UL recognized file # E95060
MECHANICAL DATA
Case : Mounted in the bridge encapsulation
Poarity : As marked on case
Mounting : Hole for # 10 screw
Weight : 0.85 ounces , 24.0 grams (terminal)
: 0.74 ounces , 21.0 grams (wire)
KBPC-GW (Wire)
E
N~
D
_
BA
D
+F
C
~
D
KBPC-G (Terminal)
BK
M
I
L
N
G~
_
J
+
C
~
KBPC-G/KBPC-GW
DIM. MIN. MAX.
A
31.80
B
7.90 8.40
C
28.30 28.80
D
17.60 18.60
E
0.97 1.07
F
10.90 11.90
G
17.60 18.60
H
13.80 14.80
I
16.10 17.10
J
16.10 17.10
K
18.80 21.30
L
0.76 0.86
M
6.30 6.50
HOLE FOR NO. 10 SCREW
N
5.08 5.59
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TC =Ta
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
SYMBOL
KBPC35
005G/W
KBPC35
01G/W
KBPC35
02G/W
KBPC35
04G/W
KBPC35 KBPC35 KBPC35
06G/W 08G/W 10G/W
UNIT
VRRM
50
100
200
400
600
800 1000 V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800 1000 V
I(AV)
35.0
A
IFSM
400
A
Maximum forward Voltage at 17.5A DC
VF
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
5.0
500
uA
I 2 t Rating for fusing (t < 8.3ms), (Note 1)
I 2t
Typical Junction
Capacitance per element (Note 2)
CJ
660
A 2S
300
pF
Typical Thermal Resistance (Note 3, see Fig.1)
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at non-repetitive, for greater than 1ms and less than 8.3ms
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
3.0
-55 to +150
-55 to +150
C/W
C
C
REV. 3, Apr-2007, KBDI03

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