101 データシートの表示（PDF） - GHz Technology
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101 Datasheet PDF : 2 Pages
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101/101A
1 Watt - 28 Volts, Class C
Microwave, 500-1200 MHz
GENERAL DESCRIPTION
The 101/101A is a COMMON BASE transistor capable of providing 1 Watt
Class C, RF output power at 500-1200 MHz. Gold Metalization and diffused
ballasting are used to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic High Temperature Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
7.0 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
200 mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55BT-1, Style 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2 GHz
Vcb = 28 Volts
Po = 1.0 Watts
As Above
F = 2 GHz, Po = 1.0 W
MIN
1.0
9.0
TYP
9.5
40
MAX UNITS
Watt
0.125 Watt
dB
%
30:1
BVces
BVcbo
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter
Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ic = 1 mA
Ie = 1.0 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 100 mA
F =1 MHz, Vcb = 28 V
50
Volts
45
Volts
3.5
Volts
500
µA
20
4.0
pF
35
C /W
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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