74LVC1G07GX データシートの表示（PDF） - NXP Semiconductors.
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74LVC1G07GX Datasheet PDF : 17 Pages
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NXP Semiconductors
74LVC1G07
Buffer with open-drain output
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
tpd
propagation delay A to Y; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
1.0
2.6
6.7
VCC = 2.3 V to 2.7 V
0.5
1.7
5.5
VCC = 2.7 V
0.5
2.3
4.7
VCC = 3.0 V to 3.6 V
0.5
2.2
4.2
VCC = 4.5 V to 5.5 V
0.5
1.6
3.5
CPD
power dissipation VI = GND to VCC; VCC = 3.3 V [3]
-
7.0
-
capacitance
−40 °C to +125 °C Unit
Min
Max
1.0
8.4 ns
0.5
7.0 ns
0.5
6.0 ns
0.5
5.5 ns
0.5
4.5 ns
-
- pF
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLZ and tPZL.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
12. Waveforms
A input
VI
GND
Y output
VCC
VOL
VM
t PLZ
VX
Fig 7.
Measurement points are given in Table 9.
VOL is the typical output voltage level that occurs with the output load.
The input (A) to output (Y) propagation delays
t PZL
VM
mna626
74LVC1G07
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 24 August 2010
© NXP B.V. 2010. All rights reserved.
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