74LVC1G11DW-7 データシートの表示（PDF） - Diodes Incorporated.

部品番号

コンポーネント説明

メーカー

74LVC1G11DW-7

SINGLE 3 INPUT POSITIVE AND GATE

Diodes Incorporated. 

74LVC1G11

SINGLE 3 INPUT POSITIVE AND GATE

Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)

Symbol

VOH

VOL

II

IOFF

ICC

ΔICC

Parameter

Test Conditions

IOH = -100μA

High Level Output

Voltage

IOH = -4mA

IOH = -8mA

IOH = -16mA

IOH = -24mA

IOH = -32mA

IOL = 100μA

IOL = 4mA

High-level Input Voltage IOL = 8mA

IOL = 16mA

IOL = 24mA

IOL = 32mA

Input Current

Power Down Leakage

Current

VI = 5.5 V or GND

VI or VO = 5.5V

Supply Current

Additional Supply

Current

VI = 5.5V of GND

IO=0

Input at VCC –0.6 V

VCC

Min

Typ. Max Unit

1.65V to 5.5V VCC – 0.1

1.65V

0.95

2.3V

1.7

V

1.9

3V

2.0

4.5V

3.4

1.65V to 5.5V

0.1

1.65V

0.70

2.3V

3V

0.45

V

0.60

0.80

4.5V

0.80

0 to 5.5V

± 20

μA

0

± 20

μA

1.65V to 5.5V

40

μA

3V to 5.5V

5000 μA

Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)

Symbol

Parameter

CI Input Capacitance

θJA

Thermal Resistance

Junction-to-Ambient

Test Conditions

VI = VCC – or GND

SOT26

SOT363

DFN1410

DFN1010

VCC

3.3

(Note 4)

Min

Typ.

Max Unit

3.5

pF

204

371

430

oC/W

510

Thermal Resistance

θJC Junction-to-Case

SOT26

SOT363

DFN1410

DFN1010

(Note 4)

52

143

190

oC/W

250

Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum

recommended pad layout.

74LVC1G11

Document number: DS35122 Rev. 3 - 2

5 of 13

www.diodes.com

July 2011

© Diodes Incorporated

Share Link: