74LVC1G98(2010) データシートの表示（PDF） - Diodes Incorporated.

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74LVC1G98
(Rev.:2010)

CONFIGURABLE MULTIPLE-FUNCTION GATE

Diodes Incorporated. 

74LVC1G98

CONFIGURABLE MULTIPLE-FUNCTION GATE

Electrical Characteristics TA= -40 °C to 125 °C (All typical values are at Vcc = 3.3V, TA = 25°C)

Symbol

Parameter

VT+

Positive-going input

threshold voltage

Test Conditions

VT-

Negative-going input

threshold voltage

ΔVT

Hysteresis

(VT+ - VT-)

VOH

VOL

II

IOFF

ICC

ΔICC

Ci

θJA

High Level Output Voltage

High-level Input Voltage

Input Current

Power Down Leakage

Current

Supply Current

Additional Supply Current

Input Capacitance

Thermal Resistance

Junction-to-Ambient

IOH = -100μA

IOH = -4mA

IOH = -8mA

IOH = -16mA

IOH = -24mA

IOH = -32mA

IOL = 100μA

IOL = 4mA

IOL = 8mA

IOL = 16mA

IOL = 24mA

IOL = 32mA

VI = 5.5 V or GND

VI or VO = 5.5V

VI = 5.5V of GND

IO=0

One input at VCC –0.6

V Other inputs at VCC

or GND

Vi = VCC – or GND

SOT26

SOT363

DFN1010

θJC

Thermal Resistance

Junction-to-Case

SOT26

SOT363

DFN1010

Vcc

1.65 V

2.3V

3V

4.5 V

5.5 V

1.65 V

2.3V

3V

4.5 V

5.5 V

1.65 V

2.3V

3V

4.5 V

5.5 V

1.65 V to 5.5V

1.65 V

2.3V

3V

4.5 V

1.65 V to 5.5V

1.65 V

2.3V

3V

4.5

0 to 5.5 V

0

1.65 V to 5.5V

3 V to 5.5V

3.3

(Note 4)

(Note 4)

(Note 4)

(Note 4)

(Note 4)

(Note 4)

Min

Typ. Max Unit

0.70

1.20

1.11

1.60

1.50

2.00

2.16

2.74

2.61

3.33

0.30

0.75

0.58

1.03

0.80

1.33

1.21

1.95

1.45

2.35

0.30

0.62

0.37

0.80

0.32

1.00

0.50

1.20

0.55

1.40

VCC – 0.1

0.95

1.7

V

1.9

2.0

3.4

0.1

0.7

0.45

V

0.6

0.8

0.8

± 100 μA

± 200 μA

200

μA

3.5

166

333

231

46

102

TBD

5000 μA

pF

oC/W

oC/W

Notes: 4. Test condition for SOT26, SOT363 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

74LVC1G98

Document number: DS35128 Rev. 1 - 2

6 of 14

www.diodes.com

December 2010

© Diodes Incorporated

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