74VHC20TTR データシートの表示（PDF） - STMicroelectronics

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74VHC20TTR

DUAL 4-INPUT NAND GATE

STMicroelectronics 

74VHC20

CAPACITIVE CHARACTERISTICS

Test Condition

Value

Symbol

Parameter

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

CIN Input Capacitance

6 10

10

10 pF

CPD Power Dissipation

Capacitance

16

pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 (per gate)

TEST CIRCUIT

CL =15/50pF or equivalent (includes jig and probe capacitance)

RT = ZOUT of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

4/7

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