74VHCT245AM データシートの表示（PDF） - STMicroelectronics
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74VHCT245AM Datasheet PDF : 9 Pages
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74VHCT245A
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Valu e
Unit
TA = 25 oC
-40 to 85 oC
Min. T yp. Max. Min. Max.
CIN Input Capacitance
4
10
10 pF
CI/O Bus Input Capacitance
8
pF
CPD Power Dissipation
Capacitance (note 1)
13
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/8(per circuit)
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
Test Conditions
V CC
( V)
Value
TA = 25 oC
Min. Typ. Max.
-40 to 85 oC
Min . Max.
Un it
VOLP Dynamic Low Voltage
5.0
VOLV Quiet Output (note 1, 2)
0.6 0.9
-0.9 -0.6
VIHD Dynamic High Voltage
5.0
CL = 50 pF
2
V
Input (note 1, 3)
VILD Dynamic Low Voltage
5.0
0.8
Input (note 1, 3)
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 1KΩ orequivalent
RT = ZOUT of pulse generator (typically 50Ω)
SW IT CH
Open
VCC
GND
5/9
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