HGT1S20N35G3VL データシートの表示（PDF） - Fairchild Semiconductor
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HGT1S20N35G3VL Datasheet PDF : 8 Pages
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
50
40
30
TC = +175oC
20 TC = +25oC
TC = -40oC
10
0
1
2
3
4
5
6
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
100
VGE=10V
7V
6.5V
6.0V
80
5.5V
5.0V
60
4.5V
40
4.0V
3.5V
20
3.0V
2.5V
0
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
TC = +175oC
40
30
VGE = 4.5V
20
10
VGE = 5.0V
VGE = 4.0V
50
VGE = 4.5V
40
30
20
10
-40oC
+25oC
+175oC
0
0
1
2
3
4
VCE(SAT) , SATURATION VOLTAGE (V)
0
0
1
2
3
4
5
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
OF SATURATION VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
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