HGT1S20N35G3VL データシートの表示（PDF） - Fairchild Semiconductor
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HGT1S20N35G3VL Datasheet PDF : 8 Pages
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
1600
1400
1200
1000
CIES
FREQUENCY = 1MHz
800
600
400
COES
200
CRES
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
12
6
10
5
VCE = 12V
8
4
6
VCE = 8V
3
VCE = 4V
4
2
2
1
0
0
0
10
20
30
40
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
SINGLE PULSE
10-5
10-3
10-1
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
350
ICER = 10mA
345
TC = +25oC AND +175oC
340
335
0
2000
4000
6000
8000
RGE, GATE-TO-EMITTER RESISTANCE (V)
10000
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S2S0Np3e5Gc3NVLuSmRebve. Br
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