75NF75 データシートの表示（PDF） - Estek Electronics Co. Ltd
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75NF75 Datasheet PDF : 2 Pages
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75NF75
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 °ْ C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 75 — — V VGS=0V,ID=250uA
△V(BR)DSS/
△TJ
Breakdown Voltage Temp. Coefficient — 0.074
— V/°C Reference to 25°C,ID=1mA
RDS(on)
Static Drain-to-Source On-resistance — — 13.0 mΩ VGS=10V,ID=40A ⑤
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V VDS=VGS, ID=250μA
gfs
Forward Transconductance
20 —
— S VDS=25V,ID=40A ⑤
IDSS
Drain-to-Source Leakage current
——
25 μA VDS=75V,VGS=0V
— — 250
VDS=60V,VGS=0V,TJ=150°C
Gate-to-Source Forward leakage
— — 100
VGS=20V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-20V
Qg
Total Gate Charge
— — 160
ID=40A
Qgs
Gate-to-Source charge
— — 29 nC VDS=60V
Qgd
Gate-to-Drain ("Miller") charge
— — 55
VGS=10V See Fig.6 and 13⑤
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 13
— 64
— 49
— 48
—
VDD=38V
—
ID=40A
— nS RG=2.5Ω
—
VGS=10V See Figure 10⑤
LD
Internal Drain Inductance
— 4.5 —
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
— 7.5 —
and center of
die contact
Ciss
Input Capacitance
— 3820 —
VGS=0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 610
— 130
— pF VDS=25V
—
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current . —
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) ②
.—
—
75
— 300
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
—
—
1.3
V TJ=25°C,IS=40A,VGS=0V ⑤
trr Reverse Recovery Time
—
100 150
nS TJ=25°C,IF=40A
Qrr Reverse Recovery Charge
—
410 610
nC di/dt=100A/μs ⑤
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
② Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
③ Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A,
VGS=10V (See Figure 12)
④ ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C
⑤ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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