SI6433DQ データシートの表示（PDF） - Fairchild Semiconductor

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SI6433DQ

20V P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

July 2001

Si6433DQ

20V P-Channel PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET is produced

using Fairchild Semiconductor’s advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

Applications

• Power management

• Load switch

Features

• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V

RDS(ON) = 65 mΩ @ VGS = –2.5 V

RDS(ON) = 100 mΩ @ VGS = –1.8 V

• RDS(ON) rated for use with 1.8 V logic

• Low gate charge (13nC typical)

• High performance trench technology for extremely

low RDS(ON)

• Low profile TSSOP-8 package

D

S

S

D

TSSOP-8

G

S

S

D

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

Parameter

VDSS

Drain–Source Voltage

VGSS

ID

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

6433

Si6433DQ

13’’

5

6

7

8

Ratings

–20

±8

–4.5

–40

1.3

0.6

–55 to +150

87

133

Tape width

16mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

Si6433DQ Rev C(W)

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