8N65L-T2Q-T データシートの表示（PDF） - Unisonic Technologies

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8N65L-T2Q-T

8A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

8N65

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Drain Current

Continuous

Pulsed (Note 2)

Avalanche Energy

Single Pulsed (Note 3)

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

TO-220/TO-262

TO-220F/TO-220F1

VDSS

VGSS

IAR

ID

IDM

EAS

EAR

dv/dt

PD

650

V

±30

V

8

A

8

A

32

A

230

mJ

14.7

mJ

4.5

V/ns

147

W

48

W

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤8A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220/TO-262

TO-220F/TO-220F1

SYMBOL

θJA

θJC

RATING

62.5

0.85

2.6

UNIT

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-591.C

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