93C56B データシートの表示（PDF） - Atmel Corporation

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93C56B

3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)

Atmel Corporation 

AT93C56B and AT93C66B

3-wire Serial EEPROM

2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)

DATASHEET

Features

 Low-voltage Operation

̶ VCC = 1.7V to 5.5V

 User-selectable Internal Organization

̶ 2K: 256 x 8 or 128 x 16

̶ 4K: 512 x 8 or 256 x 16

 3-wire Serial Interface

 Sequential Read Operation

 2MHz Clock Rate (5V)

 Self-timed Write Cycle (5ms Max)

 High Reliability

̶ Endurance: 1,000,000 Write Cycles

̶ Data Retention: 100 Years

 8-lead JEDEC SOIC, 8-lead TSSOP, 8-pad UDFN, 8-pad XDFN, and

8-ball VFBGA packages

Description

The Atmel® AT93C56B/66B provides 2,048/4,096 bits of Serial Electrically

Erasable Programmable Read-Only Memory (EEPROM) organized as 128/256

words of 16 bits each (when the ORG pin is connected to VCC) and 256/512 words

of 8 bits each (when the ORG pin is tied to ground). The device is optimized for

use in many industrial and commercial applications where low-power and low-

voltage operations are essential. The AT93C56B/66B is available in space-saving

8-lead JEDEC SOIC, 8-lead TSSOP, 8-pad UDFN, 8-pad XDFN, and 8-ball

VFBGA packages.

The AT93C56B/66B is enabled through the Chip Select pin (CS) and accessed

via a 3-wire serial interface consisting of Data Input (DI), Data Output (DO), and

Shift Clock (SK). Upon receiving a Read instruction at DI, the address is decoded,

and the data is clocked out serially on the DO pin. The write cycle is completely

self-timed, and no separate erase cycle is required before Write. The write cycle is

only enabled when the part is in the Erase/Write Enable state. When CS is

brought high following the initiation of a write cycle, the DO pin outputs the

Ready/Busy status of the part.

The AT93C56B/66B operates from 1.7V to 5.5V.

Atmel-8735C-SEEPROM-AT93C56B-66B-Datasheet_012015

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