DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FG315 データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
FG315
ST-Microelectronics
STMicroelectronics ST-Microelectronics
FG315 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STPS3150
Characteristics
Figure 3.
Average forward current versus
ambient temperature (δ = 0.5)
(SMB flat)
IF(AV)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
2.5
2.0
1.5
1.0
0.5
0.0
0
T
δ=tp/T
25
tp
50
SMB flat
Rth(j-a)=40°C/W
. SCU=2.5 cm2
Tamb(°C)
75
100
125
150
175
Figure 4.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
IM(A)
12
11
10
9
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
SMB
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (DO-201AD)
IM(A)
14
12
DO-201AD
10
Ta=25°C
8
6
4
IM
2
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=75°C
Ta=125°C
1.E+00
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
50
45
40
35
30
25
20
15
10
IM
5
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
SMB flat
TL=25°C
TL=75°C
TL=125°C
1.E+00
Figure 7. Normalized avalanche power
derating versus pulse duration
Figure 8.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
3/10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]