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AAT1150 データシートの表示(PDF) - Analog Technology Inc

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AAT1150
Analog-Technology
Analog Technology Inc Analog-Technology
AAT1150 Datasheet PDF : 16 Pages
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AAT1150
1MHz 1A Step-Down DC/DC Converter
Power and Signal Source
Separate small signal ground and power supply
pins isolate the internal control circuitry from the
noise associated with the output MOSFET switch-
ing. The low pass filter R1 and C3 in schematic
Figures 1 and 2 filters the noise associated with the
power switching.
Current Limit and Over-Temperature
Protection
For overload conditions, the peak input current is lim-
ited. Figure 3 displays the VI current limit character-
istics. As load impedance decreases and the output
voltage falls closer to zero, more power is dissipated
internally, raising the device temperature. Thermal
protection completely disables switching when inter-
nal dissipation becomes excessive, protecting the
device from damage. The junction over-temperature
threshold is 140°C with 15°C of hysteresis.
1.5V Efficiency vs. IOUT
2.7V-5.5V
C1
10µF
R1 100
R2
100k
C3
0.1µF
AAT1150-1.5
VP
FB
VCC
LX
EN
LX
SGND PGND
VOUT 1.5V 1A
L1
4.1µH
C2, C4
2x 22µF
100
80
2.7V
60
4.2V
40
3.6V
20
RTN
C1 Murata 10µF 6.3V X5R GRM42-6X 5R106K6.3
0
C2, C4 MuRata 22µF 6.3V GRM21BR60J226ME39L 0805 X5R
10
L1 Sumida CDRH5D18-4R 1µH
100
IOUT (mA)
1000
Figure 1: Lithium-Ion to 1.5V Converter.
3.5V-5.5V
C1
10µF
R1 100
R2
100k
C3
0.1µF
AAT1150-3.3
VP
FB
VCC
LX
EN
LX
SGND PGND
VOUT 3.3V 1A
L1
4.1µH
C2, C4
2x 22µF
RTN
C1 Murata 10µF 6.3V X5R GRM42-6X 5R106K6.3
C2, C4 MuRata 22µF 6.3V GRM21BR60J226ME39L X5R 0805
L1 Sumida CDRH5D18-4R 1µH
3.3 Volt Efficiency vs. IOUT
100
90 VIN = 5.0V
80
70
60
50
40
30
20
10
0
10
100
IOUT (mA)
1000
Figure 2: 5V Input to 3.3V Output Converter.
10
1150.2005.03.1.2

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