MCC161-22IO1(2016) データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
MCC161-22IO1 Datasheet PDF : 6 Pages
| |||
MCC161-22io1
Thyristor
6000
5000
4000
ITSM
3000
[A]
2000
1000
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 125°C
106
I2dt
105
[A2s]
TVJ = 45°C
TVJ = 125°C
0
0.001 0.01
0.1
1
t [s]
Fig. 1 Surge overload current ITSM,
IFSM: Crest value, t: duration
104
1
10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
320
280
240
200
ITAVM
160
[A]
120
DC
180° sin
120°
60°
30°
80
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
400
360
320
280
Ptot 240
200
[W] 160
120
80
DC
180° sin
120°
60°
30°
RthKA K/W
0.1
0.2
0.3
0.5
0.8
1.5
2.0
40
0
0 50 100 150 200 250 0
ITAVM [A]
25 50 75 100 125 150
Ta [°C]
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
100
tp = 30 µs
tp = 500 µs
PGM = 120 W
60 W
10 PGAV = 8 W
VG
[V]
1
0.1
0.01
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
IGD
0.1
1
10
IG [A]
Fig. 5 Gate trigger characteristics
1600
1200
Ptot
800
[W]
400
RthKA K/W
0.02
0.04
0.06
0.10
0.15
0.20
0.30
100
10
tgd
[μs]
1
TVJ = 25°C
limit
typ.
0
0 100 200 300 400 500 0
IdAVM [A]
25 50 75 100 125 150
T a [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
0.1
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
Share Link: 