ACS1/085S データシートの表示（PDF） - STMicroelectronics
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ACS1/085S Datasheet PDF : 8 Pages
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ACS108-5Sx
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value Unit
VDRM/
VRRM
IT(RMS)
Repetitive peak off-state voltage
RMS on-state current full cycle sine
wave 50 to 60 Hz
Tj = 125 °C
500
V
TO-92 Tlead = 75 °C
0.8
A
TO-92 Tamb = 60 °C
0.3
A
SOT-223 Tamb = 75 °C
0.8
A
ITMS Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
F = 50 Hz
F = 60 Hz
7.3
A
8
A
dI/dt Critical rate of repetitive rise of on-state current
F = 120 Hz
100
A/µs
IG = 20mA with tr = 100ns
VPP Non repetitive line peak pulse voltage
Tstg Storage temperature range
note 1
2
kV
- 40 to + 150 °C
Tj
Operating junction temperature range
- 30 to + 125 °C
Tl
Maximum lead temperature for soldering during 10s
260
°C
Note 1: according to test described by IEC61000-4-5 standard & Figure 3.
t(s) SWITCH GATE CHARACTERISTICS (maximum values)
c Symbol
u PG(AV)
rod IGM
VGM
Parameter
Average gate power dissipation
Peak gate current (tp = 20µs)
Peak positive gate voltage (respect to the pin COM)
Value Unit
0.1
W
1
A
5
V
te P THERMAL RESISTANCES
le Symbol
o Rth (j-a) Junction to ambient
Parameter
bs Rth (j-l) Junction to lead for full AC line cycle conduction
- O Rth (j-t) Junction to tab for full AC line cycle conduction
TO-92
SOT-223 (*)
TO-92
SOT-223
Value
150
60
60
25
Unit
°C/W
°C/W
°C/W
°C/W
) (*) : with 5 cm2 copper (e=35µm) surface under tab
t(s ELECTRICAL CHARACTERISTICS
c For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3
du Symbol
ro IGT
P VGT
te VGD
le IH
VOUT = 12V
VOUT = 12V
VOUT = VDRM
IOUT = 100mA
Test conditions
RL = 140Ω
RL = 140Ω
RL = 3.3kΩ
gate open
ObsoIL
IG = 20mA
Tj = 25°C MAX.
Tj = 25°C MAX.
Tj = 125°C MIN.
Tj = 25°C TYP.
MAX.
Tj = 25°C TYP.
MAX.
Values
10
1
0.15
25
60
30
65
Unit
mA
V
V
mA
mA
mA
mA
VTM
IDRM /
IRRM
dV/dt
(dI/dt)c
IOUT = 1.1A
tp = 500µs
VOUT = VDRM
VOUT = VRRM
VOUT = 400V gate open
(dV/dt)c = 10V/µs
Tj = 25°C MAX.
1.3
V
Tj = 25°C MAX.
2
µA
Tj = 125°C MAX.
200
µA
Tj = 110°C MIN.
500
V/µs
Tj = 110°C MIN.
0.1
A/ms
(dI/dt)c* (dV/dt)c = 15V/µsIOUT < 0 (note 3)
Tj = 110°C MIN.
0.3
A/ms
VCL ICL = 1mA
tp = 1ms
Tj = 25°C TYP.
600
V
2/8
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