VG26S18165C データシートの表示（PDF） - Vanguard International Semiconductor

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VG26S18165C

1,048,576 x 16 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

Absolute Maximum Ratings

Parameter

Voltage on an any pin relative to Vss

Supply voltage relative to Vss

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

5V

3.3V

5V

3.3V

VG26(V)(S)18165C/VG26(V)(S)18165D

1,048,576 x 16 - Bit

CMOS Dynamic RAM

Symbol

VT

VCC

IOUT

PD

TOPT

TSTG

Value

Unit

-1.0 to + 7.0

V

-0.5 to + 4.6

-1.0 to + 7.0

V

-0.5 to + 4.6

50

mA

1.0

W

0 to + 70

°C

-55 to + 125

°C

Recommended DC Operating Conditions

Parameter/Condition

Sym-

bol

5 Volt Version

Min

Typ

Max

Supply Voltage

VCC

4.5

5.0

5.5

Input High Voltage, all inputs VIH

2.4

-

VCC + 1.0

Input Low Voltage, all inputs VIL

-1.0

-

0.8

3.3 Volt Version

Unit

Min

Typ

Max

3.0

3.3

3.6

V

2.0

-

VCC + 0.3 V

-0.3

-

0.8

V

Capacitance

Ta = 25°C, VCC = 5V ±10 % or 3.3V ±10 %, f = 1MHz

Parameter

Symbol

Max

Input capacitance (Address)

CI1

5

Input capacitance (RAS , LCAS , UCAS, OE, WE)

CI2

7

Output capacitance (Data-in, Data-out)

CI/O

7

Note: 1. Capacitance measured with effective capacitance measuring method.

2. RAS, LCAS and UCAS = VIH to disable Dout.

Unit Note

pF

1

pF

1

pF

1, 2

Document:1G5-0179

Rev.1

Page 5

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