ACST435-8BTR(2014) データシートの表示（PDF） - STMicroelectronics
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ACST435-8BTR Datasheet PDF : 14 Pages
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Characteristics
1
Characteristics
ACST4
Table 2. Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS) On-state rms current (full sine wave)
TO-220FPAB Tc = 105 °C
DPAK
Tc = 110 °C
DPAK with 0.5
cm² copper
Tamb = 60 °C
ITSM
I²t
Non repetitive surge peak on-state current F = 60 Hz
(full cycle sine wave, TJ initial = 25 °C)
F = 50 Hz
I²t Value for fusing
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
dI/dt
VPP (1)
Critical rate of rise of on-state current
IG = 2 x IGT, tr = 100 ns
Non repetitive line peak mains voltage (1)
F = 120 Hz
Tj = 125 °C
Tj = 25 °C
PG(AV) Average gate power dissipation
Tj = 125 °C
PGM Peak gate power dissipation (tp = 20 µs)
Tj = 125 °C
IGM Peak gate current (tp = 20 µs)
Tj = 125 °C
Tstg Storage junction temperature range
Tj
Operating junction temperature range
Tl
Maximum lead soldering temperature during 10 s (at 3 mm from plastic case)
VINS(RMS) Insulation rms voltage
T0-220FPAB
1. According to test described in IEC 61000-4-5 standard and Figure 19
Value
4
1
32
30
6
100
2
0.1
10
1.6
-40 to +150
-40 to +125
260
1500
Unit
A
A
A
A²s
A/µs
kV
W
W
A
°C
°C
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
ACST410 ACST435
IGT(1)
VGT
VGD
IH (2)
IL
dV/dt (2)
(dI/dt)c (2)
(dI/dt)c (2)
VCL
VOUT = 12 V, RL = 33 Ω
I - II - III
VOUT = 12 V, RL = 33 Ω
I - II - III
VOUT = VDRM, RL = 3.3 kΩ,Tj = 125 °C I - II - III
IOUT = 500 mA
IG = 1.2 x IGT
I - II-III
VOUT = 67% VDRM gate open, Tj = 125 °C
without snubber, Tj = 125 °C
(dV/dt)c = 15 V/µs, Tj = 125 °C
ICL = 0.1 mA, tp = 1 ms
MAX
MAX
MIN
MAX
MAX
MIN
MIN
MIN
10
35
1.0
1.1
0.2
20
25
40
60
500
1000
5
2
850
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
Unit
mA
V
V
mA
mA
V/µs
A/ms
A/ms
V
2/14
DocID8766 Rev 6
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