ACST435-8BTR(2014) データシートの表示（PDF） - STMicroelectronics
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ACST435-8BTR Datasheet PDF : 14 Pages
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ACST4
Characteristics
Figure 10. On-state characteristics
(maximum values)
100 ITM(A)
Tjmax:
Vto = 0.90 V
Rd = 110 mΩ
10
Tj = 125 °C
Tj = 25 °C
1
VTM(V)
0
1
2
3
4
5
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
junction temperature
(dI/dt)c [Tj] / (dl/dt)c [Tj = 125 °C]
8
7
6
5
4
3
2
1
0
25
50
75
Tj(°C)
100
125
Figure 12. Relative variation of static dV/dt
immunity versus junction temperature
(gate open)
Figure 13. Relative variation of leakage current
versus junction temperature
dV/dt [Tj] / dV/dt [Tj = 125 °C]
6
5
4
3
2
1
0
25
50
75
VD = VR = 536 V
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM [Tj = 125 °C; 800 V]
1.0E+00
VDRM = VRRM = 800V
Different blocking voltages
1.0E-01
VDRM = VRRM = 600 V
1.0E-02
VDRM = VRRM = 200 V
Tj(°C)
1.0E-03
Tj(°C)
100
125
25
50
75
100
125
Figure 14. Relative variation of the clamping
voltage (VCL) versus junction temperature
(minimum values)
VCL[Tj] / VCL [Tj = 25 °C]
1.15
1.10
1.05
1.00
0.95
0.90
Tj(°C)
0.85
-50
-25
0
25
50
75
100
125
Figure 15. Thermal resistance junction to
ambient versus copper surface under tab
Rth(j-a)(°C/W)
100
90
80
Printed circuit board FR4,
copper thickness = 35 µm
70
60
50
40
30
20
10
SCU(cm²)
0
0
5
10
15
20
25
30
DPAK
35
40
DocID8766 Rev 6
5/14
14
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