ACST67S データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
ACST67S Datasheet PDF : 10 Pages
| |||
ACST6
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter
Value Unit
VDRM/
VRRM
IT(RMS)
Repetitive peak off-state voltage
RMS on-state current full cycle sine wave
50 to 60 Hz, no heat sink
RMS on-state current full cycle sine wave
50 to 60 Hz, TO-220AB package
Tj = 125 °C
700
V
Tamb = 40 °C
1.5
A
Tcase = 105 °C
6
A
ITSM
I2t
Non repetitive surge peak on-state current
Tj initial = 25 °C, full cycle sine wave
Thermal constraint for fuse selection
tp = 20ms
tp = 16.7ms
tp = 10ms
45
A
50
A
11
A2s
Non repetitive on-state current critical rate of rise
dI/dt IG = 10mA (tR < 100ns)
Rate period > 1mn
100
A/µs
VPP Non repetitive line peak pulse voltage (see note 1)
Tstg Storage temperature range
Tj Operating junction temperature range
Tl Maximum lead soldering temperature during 10s
2
kV
- 40 to + 150 °C
- 30 to + 125 °C
260
°C
Note 1: according to test described by IEC61000-4-5 standard and figure 3.
Table 3: Gate Characteristics (maximum values)
Symbol
Parameter
Value
Unit
PG (AV)
PGM
IGM
Average gate power dissipation
Peak gate power dissipation (tp = 20µs)
Peak gate current (tp = 20µs)
0.1
W
10
W
1
A
Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a)
Rth(j-a)
Rth(j-a)
Rth(j-c)
Rth(j-c)
Junction to ambient TO-220AB / TO-220FPAB
Junction to ambient I2PAK
Junction to ambient D2PAK soldered on 1 cm2 copper pad
Junction to case for full cycle sine wave conduction (TO-220AB)
Junction to case for full cycle sine wave conduction (TO-220FPAB)
Value
60
65
45
2.5
3.5
Unit
°C/W
°C/W
2/10
®
Share Link: 