ACTS245T データシートの表示（PDF） - Intersil

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ACTS245T

Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver

Intersil 

Die Characteristics

DIE DIMENSIONS:

(2440µm x 2970µm x 533µm ±51µm)

96 x 117 x 21mils ±2mil

METALLIZATION:

Type: Al Si Cu

Thickness: 10.0kÅ ±2kÅ

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

Bond Pad #20 (VCC) First

Bond Pad #20 (VCC) Uses Two Bond Wires

Bond Pad #10 (GND) Uses Two Bond Wires

Metallization Mask Layout

A0

(2)

ACTS245T

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Silox (SiO2)

Thickness: 8.0kÅ ±1.0kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

TRANSISTOR COUNT:

420

PROCESS:

CMOS SOS

ACTS245T

DIR

VCC VCC

OE

(1)

(20) (20)

(19)

A1 (3)

(18) B0

A2 (4)

(17) B1

A3 (5)

A4 (6)

(16) B2

(15) B3

A5 (7)

A6 (8)

(14) B4

(13) B5

(9)

(10) (10)

(11)

(12)

A7

GND GND

B7

B6

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