AD5530BRUZ-REEL71 データシートの表示（PDF） - Analog Devices
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AD5530BRUZ-REEL71 Datasheet PDF : 20 Pages
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AD5530/AD5531
DAISY-CHAINING AND READBACK TIMING CHARACTERISTICS
VDD = 10.8 V to 16.5 V, VSS = −10.8 V to −16.5 V; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications TMIN to TMAX, unless
otherwise noted.
Table 5.
Parameter1, 2, 3
fMAX
t1
t2
t3
t4
t5
t6
t7
t8
t12
t13
t14
t15
t16
t17
Limit at TMIN, TMAX
2
500
200
200
50
40
50
40
15
50
130
50
50
50
100
Unit
MHz max
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns max
ns min
ns min
ns min
Description
SCLK frequency
SCLK cycle time
SCLK low time
SCLK high time
SYNC to SCLK falling edge setup time
SCLK falling edge to SYNC rising edge
Min SYNC high time
Data setup time
Data hold time
CLR pulse width
SCLK falling edge to SDO valid
SCLK falling edge to SDO invalid
RBEN to SCLK falling edge setup time
RBEN hold time
RBEN falling edge to SDO valid
1 Guaranteed by design, not subject to production test.
2 Sample tested during initial release and after any redesign or process change that can affect this parameter. All input signals are measured with tR = tF = 5 ns (10% to
90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
3 SDO; RPULLUP = 5 kΩ, CL = 15 pF
SCLK
SYNC
SDIN
SDO
(DAISY-
CHAINING)
RBEN
SDO
(READBACK)
t1
t3
t4
t5
t2
t6
MSB
t7 t8
DB15
DB14
DB11
LSB
DB0
t13
MSB
DB15
t14
DB11
t15
LSB
DB0
t16
t17
MSB
Figure 3. Timing Diagram for Daisy-Chaining and Readback Mode
t13
0
0
RB13
t14
RB0
LSB
Rev. B | Page 6 of 20
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