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AD8629D703L データシートの表示(PDF) - Analog Devices

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AD8629D703L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
AD8629S
4.0 Specifications
4.1. Absolute Maximum Ratings 1/
Supply voltage (+VS to -VS) ........................................................... +6 V
Input voltage (VIN) 4/ ...................................................................... -VS -0.3V to +VS +0.3V
Differential input voltage 2/ ............................................................ ±5.0V
Output short circuit duration to GND .............................................. Indefinite
Storage temperature range ........................................................... -65qC to +150qC
Junction temperature maximum (TJ) ............................................. +150qC
Lead temperature (soldering, 60 seconds) ................................... +300qC
Thermal resistance, junction-to-case (TJC) .................................... 22 qC/W 5/
Thermal resistance, junction-to-ambient (TJA) ............................... 132 qC/W 5/
4.2. Recommended Operating Conditions
Supply voltage (+VS to -VS) ........................................................... +2.7 V to +5.0 V
Ambient operating temperature range (TA)…………………………. -55qC to +125qC
4.3. Nominal Operating Performance Characteristics 3/
Output Current (Io) ......................................................................... +/-10 mA at +VS = 2.7
.................................................................................................... +/-30 mA at +VS = 5.0
Input Capacitance (CIN) ................................................................. 1.5 pF Differential
.................................................................................................... 8.0 pF Common Mode
Slew Rate (SR, RL=.ȍ  ............................................................. 1.0 V/µS
Overload Recovery Time ............................................................... 0.05 mS
Voltage Noise (en P-P, 0.1 to 10 Hz BW) ......................................... 500 nV p-p
(en P-P, 0.1 to 1.0 Hz BW) ........................................ 160 nV p-p
Voltage Noise Density (en, f=1K Hz) .............................................. Q9¥+]
Current Noise Density (in, f=10 Hz) ……………………………….. .. I$¥+]
4.4. Radiation Features
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….10 k rads(Si)
1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum ratings for extended periods may affect device reliability.
2/ Differential input voltage is limited to ±5V or the supply voltage, whichever is less
3/ Unless otherwise specified, +VS = 5V, -Vs=GND, VCM = 2.5V, and TA = 25ºC.
4/ See section 7.2
5/ Measurement taken under absolute worst case condition. Data taken with a thermal camera for highest power density location. See MIL-STD-1835 for
average package TJC thermal numbers.
ASD0016529 Rev. E | Page 2 of 8

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