DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ADA4940-1ACPZ-RL データシートの表示(PDF) - Analog Devices

部品番号
コンポーネント説明
メーカー
ADA4940-1ACPZ-RL Datasheet PDF : 32 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 9.
Parameter
Supply Voltage
VOCM
Differential Input Voltage
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
ESD
Field Induced Charged Device Model (FICDM)
Human Body Model (HBM)
Rating
8V
±VS
1.2 V
−40°C to +125°C
−65°C to +150°C
300°C
150°C
1250 V
2000 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for the device soldered on a circuit board in still air.
Table 10.
Package Type
θJA
8-Lead SOIC (Single)/4-Layer Board
158
16-Lead LFCSP (Single)/4-Layer Board 91.3
24-Lead LFCSP (Dual)/4-Layer Board
65.1
Unit
°C/W
°C/W
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4940-1/
ADA4940-2 packages is limited by the associated rise in
junction temperature (TJ) on the die. At approximately 150°C,
which is the glass transition temperature, the plastic changes its
properties. Even temporarily exceeding this temperature limit
can change the stresses that the package exerts on the die,
permanently shifting the parametric performance of the
ADA4940-1/ADA4940-2. Exceeding a junction temperature
of 150°C for an extended period can result in changes in the
silicon devices, potentially causing failure.
ADA4940-1/ADA4940-2
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power dissipation is the voltage between the supply pins (±VS)
times the quiescent current (IS). The load current consists of the
differential and common-mode currents flowing to the load, as
well as currents flowing through the external feedback networks
and internal common-mode feedback loop. The internal
resistor tap used in the common-mode feedback loop places a
negligible differential load on the output. RMS voltages and
currents should be considered when dealing with ac signals.
Airflow reduces θJA. In addition, more metal directly in contact
with the package leads from metal traces, through holes, ground,
and power planes reduces the θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC (θJA =
158°C/W, single)the 16-lead LFCSP (θJA = 91.3°C/W, single) and
24-lead LFCSP (θJA = 65.1°C/W, dual) packages on a JEDEC
standard 4-layer board. θJA values are approximations.
3.5
3.0
ADA4940-2 (LFCSP)
2.5
ADA4940-1 (LFCSP)
2.0
1.5
1.0
ADA4940-1 (SOIC)
0.5
0
–40 –20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Safe Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. B | Page 7 of 32

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]