ADN2820 データシートの表示（PDF） - Analog Devices
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ADN2820 Datasheet PDF : 12 Pages
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ADN2820
SPECIFICATIONS
Table 1. Electrical Specifications
Parameter
DYNAMIC PERFORMANCE
Bandwidth1, 2
Total Input RMS Noise1, 2
Small Signal Transimpedance
Transimpedance Ripple2
Group Delay Variation2
Total Peak-to-Peak Jitter 2, 3
Low Frequency Cutoff
S22
Linear Input Range
Input Overload Current1, 2
Maximum Output Swing
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common-Mode Voltage
Output Offset
Offset Adjust Sensitivity
Offset Adjust Range
POWMON Sensitivity
POWMON Offset
Conditions1
–3 dB
DC to 10 GHz
100 MHz
100 MHz to 3 GHz
100 MHz to 3 GHz
100 MHz to 9 GHz
IIN,P-P = 2.5 mA
CLF = 0.1 µF
DC – 10 GHz, differential
Peak-to-peak, <1 dB compression
ER = 10 dB
ER = 4 dB
Differential, IIN P-P = 2.0 mA
DC terminated to VCC
IIN, AVE < 0.1 mA
See Figure 3
See Figure 3
IIN, AVE = 10 µA to 1 mA
IIN, AVE = 0 µA
Min Typ
7.5
4000
1.4
1.0
0.88
9
1.0
5000
±0.5
±10
±30
17
12
–10
0.15
2.8
1.9
1.1
147 200
0.75 0.85
VCC – 0.3
–20 ±3
120
240
0.76 1
20
Max Unit
6000
GHz
µA
V/A
dB
ps
ps
ps
kHz
dB
mA
mA p-p
mA p-p
V p-p
264 mW
0.93 V
V
+20 mV
mV/V
mV
1.2 V/mA
mV
1 Min/Max VCC = 3.3 V ± 0.3 V, TAMBIENT = –15°C to +85°C; Typ VCC = 3.3 V, TAMBIENT = 25°C.
2 Photodiode capacitance CD = 0.22 pF ± 0.04 pF; photodiode resistance = 20 Ω; CB = CF = 100 pF; RF = 100 Ω; input wire bond inductance LIN = 0.5 nH ± 0.15 nH; output
bond wire inductance LOUT, OUTB = 0.85 nH ± 0.15 nH; load impedance = 50 Ω (each output, dc- or ac-coupled).
3 10–12 BER, 8 dB extinction ratio, 0.85 A/W PIN responsivity.
Rev. 0 | Page 3 of 12
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