ADN2850BCPZ250(RevF) データシートの表示（PDF） - Analog Devices
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ADN2850BCPZ250 Datasheet PDF : 30 Pages
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Data Sheet
ADN2850
Parameter
CURRENT MONITOR TERMINALS
Current Sink at V1
Current Sink at V2
DYNAMIC CHARACTERISTICS3, 7
Resistor Noise Density
Analog Crosstalk
Symbol
I1
I2
eN_WB
CT
Test Conditions/Comments
Min Typ1
Max Unit
0.0001
0.0001
10 mA
10 mA
Code = full scale
RWB = 25 kΩ/250 kΩ, TA = 25°C
VBX = GND, Measured VW1 with VW2 =
1 VRMS, f = 1 kHz, Code 1 = midscale,
Code 2 = midscale, RWB =
25 kΩ/250 kΩ
20/64
−95/−80
nV/√Hz
dB
1 Typical values represent average readings at 25°C and VDD = 5 V.
2 Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. The maximum current in each code is defined by IWB = (VDD − 1)/RWB.
(see Figure 20).
3 Guaranteed by design and not subject to production test.
4 Common-mode leakage current is a measure of the dc leakage from any Terminal B, or Terminal W to a common-mode bias level of VDD/2.
5 EEMEM restore mode current is not continuous. Current is consumed while EEMEM locations are read and transferred to the RDAC register.
6 PDISS is calculated from (IDD × VDD) + (ISS × VSS).
7 All dynamic characteristics use VDD = +2.5 V and VSS = −2.5 V.
Rev. F | Page 5 of 30
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