ADP3178JR データシートの表示（PDF） - Analog Devices
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ADP3178JR Datasheet PDF : 16 Pages
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ADP3158/ADP3178
Note that there is a trade-off between converter efficiency and
cost. Larger MOSFETs reduce the conduction losses and allow
higher efficiency, but increase the system cost. If efficiency is not a
major concern, a Vishay-Siliconix SUB45N03-13L (RDS(ON) =
10 mΩ nominal, 16 mΩ worst-case) for the high-side and a
Vishay-Siliconix SUB75N03-07 (RDS(ON) = 6 mΩ nominal,
10 mΩ worst-case) for the low-side are good choices.
The high-side MOSFET dissipation is:
PDHSF
= I RMSHSF 2
× RDS(ON ) + VIN
× IL(PEAK ) × QG
2 × IG
×
f MIN
PDHSF
=
8.8
A2
× 16 mΩ +
5V
× 15
A × 70 nC
2 ×1A
× 195 kHz
= 1.75 W
(19)
where the second term represents the turn-off loss of the
MOSFET. In the second term, QG is the gate charge to be
removed from the gate for turn-off and IG is the gate current.
From the data sheet, QG is 70 nC and the gate drive current
provided by the ADP3159 is about 1 A.
The low-side MOSFET dissipation is:
PDLSF = IRMSLSF 2 × RDS(ON )
PDLSF = 10.8 A2 × 10 mΩ = 1.08 W
(20)
Note that there are no switching losses in the low-side MOSFET.
Surface mount MOSFETs are preferred in CPU core converter
applications due to their ability to be handled by automatic
assembly equipment. The TO-263 package offers the power
handling of a TO-220 in a surface-mount package. However,
this package still needs adequate copper area on the PCB to
help move the heat away from the package.
The junction temperature for a given area of 2-ounce copper
can be approximated using:
( ) TJ = θJA × PD + TA
(21)
assuming:
θJA = 45°C/W for 0.5 in2
θJA = 36°C/W for 1 in2
θJA = 28°C/W for 2 in2
For 1 in2 of copper area attached to each transistor and an
ambient temperature of 50°C:
TJHSF = (36°C/W × 1.48 W) + 50°C = 103°C
TJLSF = (36°C/W × 1.08 W) + 50°C = 89°C
All of the above-calculated junction temperatures are safely
below the 175°C maximum specified junction temperature of
the selected MOSFETs.
CIN Selection and Input Current di/dt Reduction
In continuous inductor-current mode, the source current of the
high-side MOSFET is approximately a square wave with a duty
ratio equal to VOUT/VIN and an amplitude of one-half of the
maximum output current. To prevent large voltage transients, a
low ESR input capacitor sized for the maximum rms current
must be used. The maximum rms capacitor current is given by:
IC(RMS ) = IO DHSF − DHSF 2 =
(22)
15 A 0.36 – 0.362 = 7.2 A
For a ZA-type capacitor with 1000 µF capacitance and 6.3 V
voltage rating, the ESR is 24 mΩ and the maximum allowable
ripple current at 100 kHz is 2 A. At 105°C, at least four such
capacitors must be connected in parallel to handle the calculated
ripple current. At 50°C ambient, however, a higher ripple cur-
rent can be tolerated, so three capacitors in parallel are adequate.
The ripple voltage across the three paralleled capacitors is:
VC( IN )RIPPLE
=
IO
×
ESRC
nC
(
IN
)
+
nC
DHSF
× CIN ×
f MAX
VC( IN )RIPPLE
= 15
A
×
24
mΩ
3
+
36%
3 × 1000 µF × 195 kHz
= 129 mV
(23)
To further reduce the effect of the ripple voltage on the system
supply voltage bus, and to reduce the input-current di/dt to
below the recommended maximum of 0.1 A/ms, an additional
small inductor (L > 1 µH @ 10 A) should be inserted between
the converter and the supply bus.
Feedback Compensation for Active Voltage Positioning
Optimized compensation of the ADP3158 and ADP3178 allows
the best possible containment of the peak-to-peak output voltage
deviation. Any practical switching power converter is inherently
limited by the inductor in its output current slew rate to a value
much less than the slew rate of the load. Therefore, any sudden
change of load current will initially flow through the output capaci-
tors, and this will produce an output voltage deviation equal to the
ESR of the output capacitor array times the load current change.
TEK RUN: 200kS/s SAMPLE TRIG'D
2
CH1 100mV
CH2 M 250s
CH2
680mV
Figure 4. Transient Response of the Circuit of Figure 3
–10–
REV. A
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