ADP3629 データシートの表示（PDF） - Analog Devices

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ADP3629

High Speed, Dual, 2 A MOSFET Driver

Analog Devices 

ADP3629/ADP3630/ADP3631

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

VDD

OUTA, OUTB

DC

<200 ns

INA, INA, INB, INB, SD

ESD

Human Body Model (HBM)

Field Induced Charged Device

Model (FICDM)

SOIC_N

MSOP

Junction Temperature Range

Storage Temperature Range

Lead Temperature

Soldering (10 sec)

Vapor Phase (60 sec)

Infrared (15 sec)

Rating

−0.3 V to +20 V

−0.3 V to VDD + 0.3 V

−2 V to VDD + 0.3 V

−0.3 V to VDD + 0.3 V

3.5 kV

1.5 kV

1.0 kV

−40°C to +150°C

−65°C to +150°C

300°C

215°C

260°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for a device soldered in a 4-layer circuit board

and is measured per JEDEC standards JESD51-2, JESD51-5,

and JESD51-7.

Table 3. Thermal Resistance

Package Type

8-Lead SOIC_N

8-Lead MSOP

θJA

110.6

162.2

Unit

°C/W

°C/W

ESD CAUTION

Rev. 0 | Page 6 of 16

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