AH215-S8G(2005) データシートの表示（PDF） - WJ Communications => Triquint
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AH215-S8G Datasheet PDF : 7 Pages
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AH215
1 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve superior performance for various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
• MTTF > 100 Years
• Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
• Final stage amplifiers for Repeaters
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
• Mobile Infrastructure
1
8
2
7
3
6
4
5
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications (1)
Typical Performance (4)
Parameters
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain
dB
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
Output IP3 (2)
dBm
dBm
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
dBm
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3)
dBm
mA
Device Voltage, Vcc
V
Min
400
10
+29
+43.8
400
Typ
2140
11
18
8
+31.5
+45
6.3
+25.5
+23
450
5
Max
2300
500
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18
12
11
-13
-11
-18
-7
-10
-8
+31 +32 +31.5
+46 +46 +45
+25.5 +25.5
+23
7.0
5.5
6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+26 dBm
+8 V
900 mA
5W
+250 °C
Ordering Information
Part No.
AH215-S8G
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
Description
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
Page 1 of 7 September 2005
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