AH420-EPCB1960 データシートの表示（PDF） - TriQuint Semiconductor
部品番号
コンポーネント説明
メーカー
AH420-EPCB1960 Datasheet PDF : 9 Pages
| |||
AH420
4W High Linearity InGaP HBT Amplifier
Product Features
Product Description
Functional Diagram
• 400 – 2700 MHz
• +35.7 dBm P1dB
• -49 dBc ACLR @ 26 dBm
• 14 dB Gain @ 2140 MHz
• 800 mA Quiescent Current
The AH420 is a high dynamic range amplifier in a low-cost
surface mount package. The InGaP/GaAs HBT is able to
achieve high performance with -49 dBc ACLR and +35.7
dBm of compressed 1dB power, operating off of a single
+5V supply. It is housed in a lead-free/green/RoHS-
compliant 4x5mm DFN package. All devices are 100% RF
and DC tested.
• +5 V Single Supply
• MTTF > 100 Years
• Lead-free/green/RoHS-compliant
12-pin 4x5mm DFN Package
Applications
• Final stage amplifiers for Repeaters
• High Power Amplifiers
The AH420 is targeted for use as a final stage amplifier in
wireless infrastructure repeaters or as driver stages for high
power amplifiers where high performance is required. In
addition, the amplifier can be used for a wide variety of
other applications within the 400 to 2700 MHz frequency
band. By operating off of a single +5V rail, other higher
voltage rails are not necessarily needed thus saving system
costs. The amplifier also has the flexibility to operate at
higher voltage levels to achieve higher compression if
needed by the system.
• Mobile Infrastructure
• LTE / WCDMA / EDGE / CDMA
Function
RFIN
RFOUT
IREF
VBIAS
NC
Pin No.
3,4,5,6
7,8,9,10
12
1
2,11
Specifications
Typical Performance
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Gain
Input Return Loss
Output Return Loss
ACLR (2)
Output P1dB
Output IP3 (4)
Quiescent Collector Current (3)
Iref
Vcc, Vbias
Units
MHz
MHz
dBm
dB
dB
dB
dBc
dBm
dBm
mA
mA
V
Min
400
13
+46.5
710
Typ
2140
+26
14
12
7.4
-49
+35.7
+50
800
20
+5
Max
2700
16
900
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when
the current setting resistor, R4 connected to the Iref pin, is at 82 Ω.
4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
Channel Power
Gain
Input Return Loss
Output Return Loss
ACLR (2)
Output P1dB
Noise Figure
Output IP3 (4)
Quiescent Collector Current (3)
Iref
Vcc, Vbias
Units
MHz
dBm
dB
dB
dB
dBc
dBm
dB
dBm
mA
mA
V
Typical
940 1960 2140
+27 +27 +26
16 14.1 14
14
19
12
6.4
7
7.4
-46.5 -48 -49
+35.2 +35.6 +35.7
6.6 5.3 5.6
+50 +49 +50
800
20
+5
5. The amplifier has been tested for ruggedness to be capable of handling:
10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C
10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C
10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C
Absolute Maximum Ratings
Parameter
Storage Temperature
Vcc, Vbias
RF Input Power, CW, 50 Ω, T=25°C
Reference Current, Iref
Dissipated Power, Pmax
Max Junction Temperature, TJ
For 106 hours MTTF
Thermal Resistance, ΘJC
Rating
-65 to +150 °C
+14 V
Input P9dB
170 mA
7W
158 °C
10.6 °C / W
Ordering Information
Part No.
AH420-EG
AH420-EPCB900
AH420-EPCB1960
AH420-EPCB2140
Description
4W High Linearity InGaP HBT Amplifier
920-960 MHz Evaluation Board
1930-1990 MHz Evaluation Board
2110-2170 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 1 of 9 July 2010
Share Link: 