AH420-EPCB1960 データシートの表示（PDF） - TriQuint Semiconductor
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AH420-EPCB1960 Datasheet PDF : 9 Pages
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AH420
4W High Linearity InGaP HBT Amplifier
2010-2025 MHz Application Circuit Performance Plots
TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW
Typical TD-SCDMA Performance at 25°C
Frequency (MHz) 2010 2015 2025 Units
Channel Power
24 24 24 dBm
Power Gain
13.6 13.6 13.7 dB
Input Return Loss 22 21 20 dB
Output Return Loss 4.8 5 5.1 dB
ACLR
-50 -50 -50 dBc
P1dB
+34 +34 +34 dBm
Output IP3
+56 +56 +55 dBm
At +25 dBm/tone, 1MHz spacing
Noise Figure
5.5 5.5 5.5 dB
Quiescent Current, Icq
800
mA
Vpd
+5
V
Vcc
+5
V
15
14
13
12
11
10
2.00
Gain vs. Frequency
T=25°C
2.01
2.02
2.03
Frequency (GHz)
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The edge of C13 is placed at 70 mil from AH420 RFout pin. (7.7o @ 2015 MHz)
4. The edge of C15 is placed nex to the edge of C13.
5. The edge of C16 is placed 30 mil from the edge of C15. (3.3 o @ 2015 MHz)
6. The edge of C14 is placed at 145 mil from AH420 RFin pin. (16o @ 2015 MHz)
7. The edge of C17 is placed 115 mil from the edge of C14. (12.7 o @ 2015 MHz)
0
-5
-10
-15
-20
-25
-30
2.04
2.00
Return Loss
T=25°C
Current vs Output Average Power vs. Frequency
T=25°C
875
2010 MHz
2015 MHz
2025 MHz
850
825
S11 S22
2.01
2.02
2.03
Frequency (GHz)
800
2.04
18
19
20
21
22
23
24
25
26
Output Power (dBm)
ACLR vs. Output Average Power vs. Frequency
-40
T=25°C
-42
2010 MHz 2015 MHz 2025 MHz
-44
-46
-48
-50
-52
-54
-56
-58
-60
19
20
21
22
23
24
25
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 6 of 9 July 2010
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