M28256 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M28256

256 Kbit (32K x 8) Parallel EEPROM With Software Data Protection

STMicroelectronics 

M28256

256 Kbit (32K x 8) Parallel EEPROM

With Software Data Protection

NOT FOR NEW DESIGN

s Fast Access Time:

– 90 ns at VCC=5 V for M28256

– 120 ns at VCC=3 V for M28256-W

s Single Supply Voltage:

– 4.5 V to 5.5 V for M28256

– 2.7 V to 3.6 V for M28256-W

s Low Power Consumption

s Fast BYTE and PAGE WRITE (up to 64 Bytes)

– 3 ms at VCC=4.5 V for M28256

– 5 ms at VCC=2.7 V for M28256-W

s Enhanced Write Detection and Monitoring:

– Data Polling

– Toggle Bit

– Page Load Timer Status

s JEDEC Approved Bytewide Pin-Out

s Software Data Protection

s 100,000 Erase/Write Cycles (minimum)

s 10 Year Data Retention (minimum)

DESCRIPTION

The M28256 and M28256-W devices consist of

32K x 8 bits of low power, parallel EEPROM, fab-

ricated with STMicroelectronics’ proprietary dou-

ble polysilicon CMOS technology. The devices

offer fast access time, with low power dissipation,

28

1

PDIP28 (BS)

28

1

SO28 (MS)

300 mil width

Figure 1. Logic Diagram

VCC

PLCC32 (KA)

TSOP28 (NS)

8 x 13.4 mm

Table 1. Signal Names

A0-A14

Address Input

DQ0-DQ7

Data Input / Output

W

Write Enable

E

Chip Enable

G

Output Enable

VCC

Supply Voltage

VSS

Ground

15

A0-A14

8

DQ0-DQ7

W

M28256

E

G

VSS

AI01885

April 2001

This is information on a product still in production but not recommended for new designs.

1/20

Share Link: