ALD1102(1998) データシートの表示（PDF） - Advanced Linear Devices

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ALD1102
(Rev.:1998)

DUAL P-CHANNEL MATCHED MOSFET PAIR

Advanced Linear Devices 

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, VDS

Gate-source voltage, VGS

Power dissipation

Operating temperature range PA, SA package

DA package

Storage temperature range

Lead temperature, 10 seconds

-13.2V

-13.2V

500 mW

0°C to +70°C

-55°C to +125°C

-65°C to +150°C

+260°C

OPERATING ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified

Parameter

Gate Threshold

Voltage

Symbol

VT

1102A

1102B

1102

Min Typ Max Min Typ Max Min Typ Max Unit

-0.4 -0.7 -1.2 -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V

Test

Conditions

IDS = -10µA VGS = VDS

Offset Voltage

VGS1 - VGS2

VOS

Gate Threshold TCVT

Temperature Drift

2

-1.3

5

-1.3

10 mV

IDS = -100µA VGS = VDS

-1.3

mV/°C

On Drain Current IDS (ON)

Transconductance Gfs

Mismatch

∆Gfs

Output

Conductance

GOS

Drain Source

ON Resistance

RDS(ON)

-8 -16

2

4

0.5

500

180 270

-8 -16

2

4

0.5

500

-8 -16

24

0.5

500

mA VGS = VDS = -5V

mmho VDS = -5V IDS= -10mA

%

µmho VDS = -5V IDS = -10mA

180 270

180 270 Ω

VDS = -0.1V VGS = -5V

Drain Source

ON Resistance ∆RDS(ON)

0.5

Mismatch

0.5

0.5

%

VDS = -0.1V VGS = -5V

Drain Source

Breakdown

Voltage

BVDSS

-12

-12

-12

V

IDS = -10µA VGS =0V

Off Drain Current IDS(OFF)

Gate Leakage

Current

IGSS

0.1

4

4

1 50

10

0.1 4

4

1 50

10

0.1

4 nA

VDS =-12V VGS = 0V

4 µA

TA = 125°C

1 50 pA

VDS =0V VGS =-12V

10 nA

TA = 125°C

Input

Capacitance

CISS

6 10

6 10

6 10 pF

ALD1102A/ALD1102B

Advanced Linear Devices

2

ALD1102

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