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ALD110804(2005) データシートの表示(PDF) - Advanced Linear Devices

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ALD110804 Datasheet PDF : 2 Pages
1 2
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
VOS
TC VOS
TCVGS(th)
On Drain Current
IDS (ON)
Forward Transconductance
GFS
Transconductance Mismatch
Output Conductance
GFS
GOS
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
CISS
CRSS
ton
toff
Crosstalk
Notes: 1 Consists of junction leakage currents
ALD110804/ALD110904
ALD110804 / ALD110904
Min
0.38
Typ
0.40
Max
0.42
2
10
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
0.5
10
10
100
4
3
30
1
2.5
0.1
10
10
60
Advanced Linear Devices
Unit
Test Conditions
V
IDS =1µA
VDS = 0.1V
mV
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
mA
VGS = + 9.7V
VGS = + 4.2V
VDS = +5V
mmho
VGS = + 4.2V
VDS = + 9.2V
%
µmho
%
VGS =+4.2V
VDS = +9.2V
VDS = 0.1V
VGS = +4.2V
V
IDS = 1.0µA
VGS = -0.8V
pA
VGS = -0.8V
nA
VDS =10V, TA = 125°C
pA
VDS = 0V VGS = 10V
nA
TA =125°C
pF
pF
ns
V+ = 5V RL= 5K
ns
V+ = 5V RL= 5K
dB
f = 100KHz
2

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