ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
VOS
TC ∆VOS
TC∆VGS(th)
On Drain Current
IDS (ON)
Forward Transconductance
GFS
Transconductance Mismatch
Output Conductance
∆GFS
GOS
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
∆RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
CISS
CRSS
ton
toff
Crosstalk
Notes: 1 Consists of junction leakage currents
ALD110804/ALD110904
ALD110804 / ALD110904
Min
0.38
Typ
0.40
Max
0.42
2
10
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
0.5
10
10
100
4
3
30
1
2.5
0.1
10
10
60
Advanced Linear Devices
Unit
Test Conditions
V
IDS =1µA
VDS = 0.1V
mV
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
mA
VGS = + 9.7V
VGS = + 4.2V
VDS = +5V
mmho
VGS = + 4.2V
VDS = + 9.2V
%
µmho
Ω
%
VGS =+4.2V
VDS = +9.2V
VDS = 0.1V
VGS = +4.2V
V
IDS = 1.0µA
VGS = -0.8V
pA
VGS = -0.8V
nA
VDS =10V, TA = 125°C
pA
VDS = 0V VGS = 10V
nA
TA =125°C
pF
pF
ns
V+ = 5V RL= 5KΩ
ns
V+ = 5V RL= 5KΩ
dB
f = 100KHz
2