ALD110808(2005) データシートの表示（PDF） - Advanced Linear Devices
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ALD110808
(Rev.:2005)
(Rev.:2005)
Advanced Linear Devices
ALD110808 Datasheet PDF : 2 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
ALD110808A / ALD110908A ALD110808/ ALD110908
Min
Typ
Max Min Typ
Max
0.78
0.80
0.82 0.78 0.80
0.82
Offset Voltage
VGS1-VGS2
VGS1-VGS2 Tempco
GateThreshold Tempco
On Drain Current
VOS
∆VOS
∆VGS(th)
IDS (ON)
1
2
5
-1.7
0.0
+1.6
12.0
3.0
3
10
5
-1.7
0.0
+1.6
12.0
3.0
Forward Transconductance
GFS
1.4
Transconductance Mismatch ∆GFS
1.8
Output Conductance
GOS
68
Drain Source On Resistance
RDS (ON)
500
Drain Source On Resistance
∆RDS (ON)
0.5
Mismatch
Drain Source Breakdown
BVDSX
10
Voltage
Drain Source Leakage Current1 IDS (OFF)
10
Gate Leakage Current1
IGSS
3
Input Capacitance
CISS
2.5
Transfer Reverse Capacitance CRSS
0.1
Turn-on Delay Time
ton
10
Turn-off Delay Time
toff
10
Crosstalk
60
1.4
1.8
68
500
0.5
10
100
10
100
4
4
30
3
30
1
1
2.5
0.1
10
10
60
Unit Test Condition
V
IDS =1µA
VDS = 0.1V
mV
IDS=1µA
µV/ °C VDS1= VDS2
mV/ °C
ID= 1µA
ID= 20µA VDS = 0.1V
ID= 40µA
mA
VGS= +10.3V
VGS= +4.8V
VDS= +5V
mmho VGS = +4.8V
VDS = +9.8V
%
µmho
VGS =+4.8V
VDS = +9.8V
Ω
VDS = 0.1V
VGS = +4.8V
%
V
IDS = 1.0µA
VGS = -0.2V
pA
VGS = -0.2V
nA
VDS =10V, TA = 125°C
pA
VDS = 0V VGS = 10V
nA
TA =125°C
pF
pF
ns
V+ = 5V RL= 5KΩ
ns
V+ = 5V RL= 5KΩ
dB
f = 100KHz
Notes: 1 Consists of junction leakage currents
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
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