ALD110908A データシートの表示（PDF） - Advanced Linear Devices
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ALD110908A
Advanced Linear Devices
ALD110908A Datasheet PDF : 12 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
ALD110808A/ALD110908A ALD110808/ALD110908
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset Voltage Tempco
Gate Threshold Voltage
Tempco
Drain Source On Current
Symbol
VGS(th)
VOS
Min
0.78
Typ
0.80
1
Max
0.82
2
Min
0.78
Typ
0.80
3
Max
0.82
10
TCVOS
TCVGS(th)
IDS(ON)
5
-1.7
0.0
+1.6
12.0
3.0
5
-1.7
0.0
+1.6
12.0
3.0
Forward Transconductance
GFS
1.4
1.4
Transconductance Mismatch
∆GFS
1.8
1.8
Output Conductance
GOS
68
68
Drain Source On Resistance
RDS(ON)
500
500
Drain Source On Resistance
∆RDS(ON)
0.5
0.5
Mismatch
Drain Source Breakdown
BVDSX
10
10
Voltage
Drain Source Leakage Current1 IDS(OFF)
10
400
10
400
4
4
Gate Leakage Current1
IGSS
3
200
1
3
200
1
Input Capacitance
CISS
2.5
2.5
Transfer Reverse Capacitance CRSS
0.1
0.1
Turn-on Delay Time
ton
10
10
Unit
V
mV
Test Conditions
IDS =1µA, VDS = 0.1V
µV/°C VDS1 = VDS2
mV/°C
IDS = 1µA, VDS = 0.1V
IDS = 20µA, VDS = 0.1V
IDS = 40µA, VDS = 0.1V
mA
VGS = +10.3V, VDS = +5V
VGS = +4.8V, VDS = +5V
mmho VGS = +4.8V
VDS = +9.8V
%
µmho
Ω
%
VGS = +4.8V
VDS = +9.8V
VGS = +4.8V
VDS = +0.1V
V
V- = VGS = -1.0V
IDS = 1.0µA
pA
VGS = -0.2V, VDS = +5V
V- = -5V
nA
TA = 125°C
pA
VGS = +5V, VDS = 0V
nA
TA =125°C
pF
pF
ns
V+ = 5V, RL= 5KΩ
Turn-off Delay Time
toff
10
Crosstalk
60
10
ns
V+ = 5V, RL= 5KΩ
60
dB
f = 100KHz
Notes: 1 Consists of junction leakage currents
ALD110808A/ALD110808/
ALD110908A/ALD110908, Vers. 2.3
Advanced Linear Devices
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