ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
Gate Threshold Voltage
Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
Drain Source On Current
IDS(ON)
Forward Transconductance
GFS
Transconductance Mismatch
Output Conductance
∆GFS
GOS
Drain Source On Resistance
RDS(ON)
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
∆RDS(ON)
BVDSX
IDS(OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
Notes: 1 Consists of junction leakage currents
ALD110814/ALD110914
Min
Typ
Max
1.38
1.40
1.42
3
10
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
0.5
10
10
400
4
3
200
1
2.5
0.1
10
10
60
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
IDS = 1µA
µV/°C
mV/°C
mA
mmho
%
µmho
Ω
%
VDS1 = VDS2
IDS = 1µA, VDS = 0.1V
IDS = 20µA, VDS = 0.1V
IDS = 40µA, VDS = 0.1V
VGS = +10.6V, VDS = +5V
VGS = +5.4V, VDS = +5V
VGS = +5.4V
VDS = +10.4V
VGS = +5.4V
VDS = +10.4V
VGS = +5.4V
VDS = +0.1V
V
V- = VGS = -0.6V
IDS = 1.0µA
pA
VGS = -0.6V, VDS =+5V
V- = -5V
nA
TA = 125°C
pA
VGS = +5V, VDS = 0V
nA
TA =125°C
pF
pF
ns
V+ = 5V, RL= 5KΩ
ns
V+ = 5V, RL= 5KΩ
dB
f = 100KHz
ALD110814/ALD110914, Vers. 2.3
Advanced Linear Devices
2 of 12