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AM29F016D-120DTI1 データシートの表示(PDF) - Advanced Micro Devices
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AM29F016D-120DTI1
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
Advanced Micro Devices
AM29F016D-120DTI1 Datasheet PDF : 12 Pages
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SUPPLEMENT
PAD DESCRIPTION (RELATIVE TO DIE CENTER)
Pad
Signal
Pad Center (mils)
X
Y
Pad Center (millimeters)
X
Y
1
V
CC
31.30
90.86
0.80
2.31
2
RESET#
–32.75
94.54
–0.83
2.40
3
A11
–42.74
90.77
–1.09
2.31
4
A10
–48.89
90.77
–1.24
2.31
5
A9
–55.27
90.77
–1.40
2.31
6
A8
–61.10
90.77
–1.55
2.31
7
A7
–67.48
90.77
–1.71
2.31
8
A6
–73.63
90.77
–1.87
2.31
9
A5
–80.01
90.77
–2.03
2.31
10
A4
–86.16
90.77
–2.19
2.31
11
A3
–85.72
–90.77
–2.18
–2.31
12
A2
–79.88
–90.77
–2.03
–2.31
13
A1
–74.42
–90.77
–1.89
–2.31
14
A0
–68.59
–90.77
–1.74
–2.31
15
DQ0
–58.60
–95.09
–1.49
–2.42
16
DQ1
–47.60
–95.09
–1.21
–2.42
17
DQ2
–34.33
–95.09
–0.87
–2.42
18
DQ3
–23.34
–95.09
–0.59
–2.42
19
V
SS
–14.38
–94.83
–0.37
–2.41
20
V
SS
–8.96
–94.83
–0.23
–2.41
21
V
CC
–3.54
–95.03
–0.09
–2.41
22
DQ4
16.33
–95.09
0.41
–2.42
23
DQ5
27.32
–95.09
0.69
–2.42
24
DQ6
40.59
–95.09
1.03
–2.42
25
DQ7
51.59
–95.09
1.31
–2.42
26
RY/BY#
62.06
–90.77
1.58
–2.31
27
OE#
72.14
–90.77
1.83
–2.31
28
WE#
79.49
–90.77
2.02
–2.31
29
A20
85.87
–90.77
2.18
–2.31
30
A19
82.54
90.77
2.10
2.31
31
A18
76.71
90.77
1.95
2.31
32
A17
71.25
90.77
1.81
2.31
33
A16
65.41
90.77
1.66
2.31
34
A15
59.95
90.77
1.52
2.31
35
A14
54.12
90.77
1.37
2.31
36
A13
48.66
90.77
1.24
2.31
37
A12
42.82
90.77
1.09
2.31
38
CE#
37.36
90.77
0.95
2.31
Note:
The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
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Am29F016D Known Good Die
June 11, 2002
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