WSF512K32-27H2I データシートの表示（PDF） - White Electronic Designs => Micro Semi

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WSF512K32-27H2I

512KX32 SRAM / FLASH MODULE

White Electronic Designs => Micro Semi 

WSF512K32-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol Min

Operating Temperature

TA

-55

Storage Temperature

TSTG

-65

Signal Voltage Relative to GND VG

-0.5

Junction Temperature

TJ

Supply Voltage

VCC

-0.5

Max

Unit

+125

°C

+150

°C

7.0

V

150

°C

7.0

V

Parameter

Flash Data Retention

Flash Endurance (write/erase cycles)

20 years

100,000

NOTE:

1. Stresses above the absolute maximum rating may cause permanent damage

to the device. Extended operation at the maximum levels may degrade

performance and affect reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Symbol Min

Max

Unit

VCC

4.5

5.5

V

VIH

2.2 VCC + 0.3

V

VIL

-0.5

+0.8

V

SRAM TRUTH TABLE

SCS

OE SWE

Mode

H

X

X

Standby

L

L

H

Read

L

H

H

Read

L

X

L

Write

NOTE:

1. FCS must remain high when SCS is low.

Data I/O

High Z

Data Out

High Z

Data In

Power

Standby

Active

Active

Active

CAPACITANCE

(TA = +25°C)

Test

Symbol

Condition

Max Unit

OE Capacitance

COE VIN = 0V, f = 1.0MHz 80 pF

F/S WE1-4 Capacitance

CWE VIN = 0V, f = 1.0MHz 30 pF

F/S CS Capacitance

CCS VIN = 0V, f = 1.0MHz 50 pF

D0-31 Capacitance

CI/O VIN = 0V, f = 1.0MHz 30 pF

A0-18 Capacitance

CAD VIN = 0V, f = 1.0MHz 80 pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Symbol Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

µA

Output Leakage Current

ILO

SCS = VIH, OE = VIH, VOUT = GND to VCC

10

µA

SRAM Operating Supply Current x 32 Mode

ICCx32

SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5

550

mA

Standby Current

ISB

FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5

90

mA

SRAM Output Low Voltage

VOL

IOL = 8mA, VCC = 4.5

0.4

V

SRAM Output High Voltage

VOH

IOH = -4.0mA, VCC = 4.5

2.4

V

Flash VCC Active Current for Read (1)

ICC1

FCS = VIL, OE = SCS = VIH

250

mA

Flash VCC Active Current for Program or

ICC2

FCS = VIL, OE = SCS = VIH

Erase (2)

300

mA

Flash Output Low Voltage

VOL

IOL = 12.0mA, VCC = 4.5

0.45

V

Flash Output High Voltage

VOH1

IOH = -2.5 mA, VCC = 4.5

0.85 x VCC

V

Flash Output High Voltage

VOH2

IOH = -100 µA, VCC = 4.5

VCC -0.4

V

Flash Low VCC Lock Out Voltage

VLKO

3.2

4.2

V

NOTES:

1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).

The frequency component typically is less than 2 mA/MHz, with OE at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

3

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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